c h aracteristic symbol sr120 sr130 sr140 sr150 sr160 sr180 sr1100 SR1150 sr1200 unit sr120 ? sr1200 1.0 a schottky barrier diode feat ures ! sc hottky barrier chip ! guard ring die construction for transient protection ! high current capability a b a ! low power loss, high efficiency ! high surge current capability ! for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications c d m echanic al data ! cas e: do-41, molded plastic ! terminals: plated leads solderable per mil-std-202, method 208 ! polarity: cathode band ! weight: 0.34 grams (approx.) ! mounting position: any ! marking: type number ! lead free: for rohs / lead free version m aximum r atings and electrical characteristics @t a =2 5 c unless otherwise specified single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. note: 1. valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. measured at 1.0 mhz and applied reverse voltage of 4.0v d.c. 1 of 2 sr120 ? sr1200 0.55 0. 70 0.85 0.92 v 1.0 a 14 21 28 35 42 56 70 105 140 v 20 30 40 50 60 80 100 150 200 v p eak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rw m v r rm s reverse voltage v r( rm s) a v erage rectified output current @t l = 75 c i o non-repet itive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fs m 30 a forward v oltage @i f = 1 .0a v fm p eak reverse current @t a = 25 c at rated dc blocking voltage @t a = 100 c i rm 0. 5 20 ma t ypical thermal resistance (note 1) r jl r ja 28 88 c / w operat i ng temperature range t j -65 t o +125 c s t orage temperature range t st g -65 t o +150 c z ibo seno electronic engineering co., ltd. www.senocn.com do-41 dim m in max a 24.5 ? b 4. 06 5. 21 c 0.60 0. 80 d 2. 00 3. 00 all d i mensions in mm a l l d a t a s h e e t
sr120 ? sr1 200 10 100 1000 0.1 1 10 100 c , junction capacitance (pf) j v , reverse voltage (v) fig. 4 typical junction capacitance r t = 25 c f = 1.0mhz j 0 20 40 60 80 100 120 140 i , instantaneous reverse current (ma) r percent of rated peak reverse voltage (%) fig. 5 typical reverse characteristics t = 100 c j t = 75 c j t = 25 c j 100 10 1.0 0.1 0.01 0.001 0.1 1.0 10 i , instantaneous forward current (a) f v,instantaneousforwardvoltage(v) fig.2typicalforwardcharacteristics f 20 0.2 0.00.40.60.81.0 t=25c j i pulse width = 300 s f m 0 0.5 1.0 25 50 75 100 125 150 i a verage forward current (a) (o), t , lead temperature ( c) fig. 1 forward current derating curve l 2 of 2 sr120 ? sr1200 sr180 ? sr1 2 00 sr120 ? sr140 sr150 ? sr160 sr120 ? sr140 sr150 ? sr1100 z ibo seno electronic engineering co., ltd. www.senocn.com 0 10 20 30 40 50 1 10 100 i , peak forward surge current (a) fsm number of cycles at 60 hz fig. 3 max non-repetitive peak fwd surge current single half-sine-w ave (jedec method) t = 100 c j a l l d a t a s h e e t
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